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LP5996 データシート(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部品番号 LP5996
部品情報  Dual Linear Regulator with 300mA and 150mA Outputs
PDF  14 Pages
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LP5996 データシート(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics(Notes 2, 8) (Continued)
Unless otherwise noted, V
EN = 950mV, VIN =VOUT + 1.0V, or 2.0V, whichever is higher, where VOUT is the higher of VOUT1
and V
OUT2.CIN = 1 µF, IOUT = 1 mA, COUT1 =COUT2 = 1.0µF. Typical values and limits appearing in normal type apply for TA
= 25˚C. Limits appearing in boldface type apply over the full junction temperature range for operation, −40 to +125˚C.
Symbol
Parameter
Conditions
Typ
Limit
Units
Min
Max
PSRR
Power Supply Rejection Ratio
(Note 11)
f = 1kHz, I
OUT
= 1mA to
150mA
C
BYP = 10nF
LDO1
58
dB
LDO2
70
f = 20kHz, I
OUT
= 1mA to
150mA
C
BYP = 10nF
LDO1
45
LDO2
60
e
n
Output noise Voltage (Note 11)
BW = 10Hz to
100kHz
C
BYP = 10nF
V
OUT = 0.8V
36
µV
RMS
V
OUT = 3.3V
75
T
SHUTDOWN
Thermal Shutdown
Temperature
160
˚C
Hysteresis
20
Enable Control Characteristics
I
EN
Input Current at V
EN1 or VEN2
V
EN = 0.0V
0.005
0.1
µA
V
EN =6V
2
5
V
IL
Low Input Threshold
0.4
V
V
IH
High Input Threshold
0.95
V
Timing Characteristics
T
ON
Turn On Time (Note 11)
To 95% Level
C
BYP = 10nF
300
µs
Transient
Response
Line Transient Response |
δV
OUT|
(Note 11)
T
rise =Tfall = 10µs
δV
IN = 1VCBYP = 10nF
20
mV
(pk - pk)
Load Transient Response
|
δV
OUT|
(Note 11)
T
rise =Tfall =
1µs
LDO 1
I
OUT = 1mA to
150mA
175
LDO 2
I
OUT = 1mA to
300mA
150
Note 1: Absolute Maximum Ratings are limits beyond which damage can occur. Operating Ratings are conditions under which operation of the device is
guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical
Characteristics tables.
Note 2: All Voltages are with respect to the potential at the GND pin.
Note 3: For detailed soldering specifications and information, please refer to National Semiconductor Application Note AN-1187, Leadless Leadframe Package.
Note 4: Internal thermal shutdown circuitry protects the device from permanent damage.
Note 5: The human body model is 100pF discharged through a 1.5k
Ω resistor into each pin. The machine model is a 200pF capacitor discharged directly into each
pin.
Note 6: The maximum ambient temperature (TA(max)) is dependant on the maximum operating junction temperature (TJ(max-op) = 125˚C), the maximum power
dissipation of the device in the application (PD(max)), and the junction to ambient thermal resistance of the part/package in the application (θJA), as given by the
following equation: TA(max) =TJ(max-op) -(θJA xPD(max)).
Note 7: Junction to ambient thermal resistance is dependant on the application and board layout. In applications where high maximum power dissipation is possible,
special care must be paid to thermal dissipation issues in board design.
Note 8: Min Max limits are guaranteed by design, test or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm.
Note 9: VIN(MIN) =VOUT(NOM) + 0.5V, or 2.0V, whichever is higher.
Note 10: Dropout voltage is voltage difference between input and output at which the output voltage drops to 100mV below its nominal value. This parameter only
for output voltages above 2.0V
Note 11: This electrical specification is guaranteed by design.
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