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BUB323Z データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 BUB323Z
部品情報  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUB323Z データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUB323Z Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUB323Z Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
BUB323Z
DESCRIPTION
·
Low Collector Saturation Voltage
·
High DC Current Gain
·
High Reliability
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Audio power amplifiers
·
Relay & solenoid drivers
·
Motor controls
·
General purpose power amplifiers
·
Including zener diode
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO(SUS)
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
6
V
VZ
Zener Voltage
300
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
2.5
A
PC
Collector Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W


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