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NCS2551 データシート(PDF) 3 Page - ON Semiconductor

部品番号 NCS2551
部品情報  500 MHz Voltage Feedback Op Amp
PDF  12 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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NCS2551 データシート(HTML) 3 Page - ON Semiconductor

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NCS2551
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ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV
200 V
1.0 kV
Moisture Sensitivity (Note 1)
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
Vdc
Input Voltage Range
VI
vVS
Vdc
Input Differential Voltage Range
VID
vVS
Vdc
Output Current
IO
100
mA
Maximum Junction Temperature (Note 2)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, Junction−to−Air
RqJA
158
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the
plastic
packages,
the
maximum
safe
junction
temperature is 150
°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage.
Figure 3. Power Dissipation vs. Temperature
800
400
0
−50
0
75
150
AMBIENT TEMPERATURE (C)
200
−25
25
50
100
125
1000
600
1400
1200



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