March 1993

3

Philips Semiconductors

Product specification

UHF power transistor

BLW81

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

peak value

max

36 V

Collector-emitter voltage (open base)

max

17 V

Emitter-base voltage (open collector)

max

4 V

Collector current (d.c. or average)

max

2,5 A

Collector current (peak value); f

> 1 MHz

max

7,5 A

R.F. power dissipation (f

max

40 W

Storage temperature

−65 to +150 °C

Operating junction temperature

max

200

°C

Fig.2

110

handbook, halfpage

MGP573

10

1

Th = 70 °C

Tmb = 25 °C

VCE (V)

IC

(A)

Fig.3

handbook, halfpage

0

50

100

0

50

MGP574

40

30

10

20

Th (°C)

Prf

(W)

short time operation

during

mismatch

continuous operation

derate by

0.204 W/K

r.f. power dissipation

VCE ≤ 16.5 V

f

> 1 MHz

THERMAL RESISTANCE

From junction to mounting base

=

4,3 K/W

From mounting base to heatsink

=

0,6 K/W