NTJS3151P datasheet(2/6 Pages) ONSEMI

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NTJS3151P

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−12

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = −9.6 V,

VDS = 0 V

TJ = 25°C

−1.0

TJ = 125°C

−2.5

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±4.5 V

±1.5

VDS = 0 V, VGS = ±12 V

±10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 100 mA

−0.40

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

3.4

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −3.3 A

VGS = −2.5 V, ID = −2.9 A

VGS = −1.8 V, ID = −1.0 A

133

160

Forward Transconductance

gFS

VGS = −10 V, ID = −3.3 A

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −12 V

850

Output Capacitance

COSS

170

Reverse Transfer Capacitance

CRSS

110

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −5.0 V,

ID = −3.3 A

8.6

Gate−to−Source Charge

QGS

1.3

Gate−to−Drain Charge

QGD

2.2

Gate Resistance

3000

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −6.0 V,

ID = −1.0 A, RG = 6.0 W

0.86

Rise Time

1.5

Turn−Off Delay Time

td(OFF)

3.5

Fall Time

3.9

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −3.3 A

TJ = 25°C

−0.85

−1.2

TJ = 125°C

−0.7

2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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