NTJS4151P datasheet(1/5 Pages) ONSEMI

部品番号	NTJS4151P

部品情報	Trench Power MOSFET ??0 V, ??.2 A, Single P?묬hannel, SC??8

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メーカー	ONSEMI [ON Semiconductor]

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February, 2006 − Rev. 1

1

Publication Order Number:

NTJS4151P/D

NTJS4151P

Trench Power MOSFET

−20 V, −4.2 A, Single P−Channel, SC−88

Features

• Leading Trench Technology for Low RDS(ON) Extending Battery Life

• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board

Utilization, Same as SC−70−6

• Gate Diodes for ESD Protection

• Pb−Free Package is Available

Applications

• High Side Load Switch

• Cell Phones, Computing, Digital Cameras, MP3s and PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25 °C

ID

−3.3

A

TA = 85 °C

−2.4

t ≤ 5 s

TA = 25 °C

−4.2

Power Dissipation

(Note 1)

Steady

State

TA = 25 °C

PD

1.0

W

Pulsed Drain Current

tp = 10 ms

IDM

−10

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode)

IS

−1.3

A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

ESD

Human Body Model (HBM)

ESD

4000

V

THERMAL RESISTANCE RATINGS (Note 1)

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

RqJA

125

°C/W

Junction−to−Ambient − t ≤ 5 s

RqJA

75

Junction−to−Lead – Steady State

RqJL

45

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Device

Package

Shipping†

ORDERING INFORMATION

NTJS4151PT1

SC−88

3000 / Tape & Reel

Top View

http://onsemi.com

SC−88 (SOT−363)

D

S

D

6

5

4

1

2

3

V(BR)DSS

RDS(on) Typ

ID Max

47 mW @ −4.5 V

70 mW @ −2.5 V

180 mW @ −1.8 V

−4.2 A

NTJS4151PT1G

SC−88

(Pb−Free)

3000 / Tape & Reel

G

−20 V

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC−88/SOT−363

CASE 419B

MARKING DIAGRAM &

PIN ASSIGNMENT

TY M G

G

1

6

1

TY

= Device Code

M

= Date Code

G

= Pb−Free Package

DD

S

DD

G

(Note: Microdot may be in either location)

同様の部品番号 - NTJS4151P

メーカー	部品番号	データシート	部品情報
ON Semiconductor	NTJS4151P	121Kb / 5P	Trench Power MOSFET August, 2014 ??Rev. 3
	NTJS4151PT1	121Kb / 5P	Trench Power MOSFET August, 2014 ??Rev. 3
	NTJS4151PT1G	121Kb / 5P	Trench Power MOSFET August, 2014 ??Rev. 3
VBsemi Electronics Co.,...	NTJS4151PT1G	1Mb / 9P	P-Channel 20 V (D-S) MOSFET
ON Semiconductor	NTJS4151P	121Kb / 5P	Trench Power MOSFET August, 2014 ??Rev. 3

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