C3M0120065D datasheet(3/11 Pages) WOLFSPEED

部品番号	C3M0120065D

部品情報	Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

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C3M0120065D Rev 1, 01-2021

Reverse Diode Characteristics (T

C = 25˚C unless otherwise specified)

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

VSD

Diode Forward Voltage

4.5

GS = -4 V, ISD = 3.4 A, TJ = 25 °C

Fig. 8,

9, 10

4.0

GS = -4 V, ISD = 3.4 A, TJ = 175 °C

Continuous Diode Forward Current

GS = -4 V, TC = 25˚C

IS, pulse

Diode pulse Current

GS = -4 V, pulse width tP limited by Tjmax

Reverse Recover time

GS = -4 V, ISD = 6.76 A, VR = 400 V

dif/dt = 2160 A/µs, T

J = 175 °C

Reverse Recovery Charge

rrm

Peak Reverse Recovery Current

Reverse Recover time

GS = -4 V, ISD = 6.76 A, VR = 400 V

dif/dt = 900 A/µs, T

J = 175 °C

Reverse Recovery Charge

rrm

Peak Reverse Recovery Current

Thermal Characteristics

Symbol

Parameter

Typ.

Unit

Test Conditions

Note

RθJC

Thermal Resistance from Junction to Case

1.53

°C/W

Fig. 21

RθJA

Thermal Resistance From Junction to Ambient

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