April 1991

3

Philips Semiconductors

Product specification

N-channel FETs

BSR56; BSR57; BSR58

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Notes

1. Mounted on a ceramic substrate of 8 mm

× 10 mm × 0.7 mm.

CHARACTERISTICS

Drain-source voltage

± V

DS

max.

40 V

Drain-gate voltage

max.

40 V

Gate-source voltage

−V

GSO

max.

40 V

Forward gate current

max.

50 mA

max.

250 mW

Storage temperature range

−65 to +150 °C

Junction temperature

max.

150

°C

From junction to ambient (note 1)

=

430 K/W

Gate-source cut-off current

max.

1.0 nA

Drain cut-off current

max.

1.0 nA

BSR56

BSR57

BSR58

Drain current

>

50

20

8 mA

<−

100

80 mA

Gate-source breakdown voltage

−I

>

40

40

40 V

Gate-source cut-off voltage

>

4

2

0.8 V

<

10

6

4 V

Drain-source voltage (on)

<

750

−− mV

<−

500

− mV

<−

−

400 mV

Drain-source resistance (on) at f = 1 kHz

<

25

40

60

Ω

Feedback capacitance at f = 1 MHz

−V

<

55

5 pF