CAB650M17HM3

6

Rev. 01, FEBRUARY 2022

© 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed.com/power

Typical Performance

0.0001

0.001

0.01

0.1

1E-6

10E-6

100E-6

1E-3

10E-3

100E-3

1

10

Time, tp (s)

Single Pulse

0.01

0.02

0.05

0.10

0.30

0.50

0.01

0.1

1

10

100

1000

0.1

1

10

100

1000

Drain-Source Voltage, VDS (V)

Limited by

RDS(on)

Conditions:

Tc = 25 °C

D = 0

Parameter: tp

EOff

EOn

EOff + EOn

0

10

20

30

40

50

60

70

80

90

100

0

25

50

75

100

125

150

175

200

Junction Temperature, TVJ (°C)

Conditions:

IS = 650 A, VDD = 900 V

RG(ext) = 1.5 Ω, VGS = -4/+15 V

L = 14 µH

EOff

EOn

EOff + EOn

ERR

0

20

40

60

80

100

120

140

160

0

1

2

3

4

5

External Gate Resistor, RG(ext) (Ω)

Conditions:

TVJ = 25°C

IS = 650 A

VDD = 900 V

VGS = -4/+15 V

L = 14 µH

ERR (VDD = 900 V)

ERR (VDD = 1200 V)

0

2

4

6

8

10

12

0

25

50

75

100

125

150

175

200

Junction Temperature, TVJ (°C)

Conditions:

IS = 650 A

RG(ext) = 1.5 Ω

VGS = -4/+15 V

L = 14 µH

TVJ = 25°C

TVJ = 175°C

0

2

4

6

8

10

12

14

16

0

1

2

3

4

5

6

External Gate Resistor, RG(ext) (Ω)

Conditions:

IS = 650 A

VDD = 900 V

VGS = -4/+15 V

L = 14 µH

Figure 13. MOSFET Switching Energy vs. Junction

Temperature

Figure 14. Reverse Recovery Energy vs. Junction Temperature

Figure 15. MOSFET Switching Energy vs. External Gate

Resistance

Figure 16. Reverse Recovery Energy vs. External Gate

Resistance

Figure 17. MOSFET Junction to Case Transient Thermal

Impedance, Z

th JC (°C/W)

Figure 18. Forward Bias Safe Operating Area (FBSOA)