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データシートサーチシステム |
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データシートサーチシステム |
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ISCND454M データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCND454M データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor ISCND454M DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO= 500V (Min.) · High DC Current Gain- : hFE= 1800(Min.)@IC= 5A · Low Collector Saturation Voltage- : VCE (sat)= 1.8V(Max.)@ IC=12.5A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifiers, low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 5 A ICM Collector Current-Peak 25 A IB Base Current-Continunous 0.5 A PC Collector Power Dissipation @TC=25℃ 250 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~200 ℃ |
同様の部品番号 - ISCND454M |
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同様の説明 - ISCND454M |
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