FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw

Ver : A

FKH8024A

N-Ch 80V Fast Switching MOSFETs

11

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

108

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

68

A

IDM

Pulsed Drain Current2

200

A

EAS

Single Pulse Avalanche Energy3

125

mJ

IAS

Avalanche Current

50

A

PD@TC=25

℃

Total Power Dissipation4

149

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient 1

---

55

℃/W

RθJC

Thermal Resistance Junction-Case1

---

0.84

℃/W

BVDSS

RDSON

ID

80V

6.5m

Ω

108A

The FKH8024A is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON

and gate charge for most of the synchronous buck

converter applications.

The FKH8024A meet the RoHS and Green

Product requirement, 100% EAS guaranteed with

full function reliability approved.

 100% EAS Guaranteed

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Description

Absolute Maximum Ratings

Thermal Data

TO263 Pin Configuration

Product Summary