GS66508B datasheet(1/16 Pages) GAN

部品番号	GS66508B

部品情報	Bottom-side cooled 650 V E-mode GaN transistor

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メーカー	GAN [GaN Systems Inc.]

ホームページ	https://gansystems.com/

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GS66508B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

1

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Package Outline

Features

•

650 V enhancement mode power transistor

•

Bottom-side cooled configuration

•

RDS(on) = 50 mΩ

•

IDS(max) = 30 A

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Ultra-low FOM die

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Low inductance GaNPX® package

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Simple gate drive requirements (0 V to 6 V)

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Transient tolerant gate drive (-20 V / +10 V)

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Very high switching frequency (> 10 MHz)

•

Fast and controllable fall and rise times

•

Reverse conduction capability

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Zero reverse recovery loss

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Small 7.0 x 8.4 mm2 PCB footprint

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Source Sense (SS) pin for optimized gate drive

•

RoHS 3 (6+4) compliant

Applications

•

AC-DC Converters

•

DC-DC Converters

•

Bridgeless Totem Pole PFC

•

Inverters

•

Energy Storage Systems

•

On Board Battery Chargers

•

Uninterruptable Power Supplies

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Solar Energy

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Industrial Motor Drives

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Appliances

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Laser Drivers

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Wireless Power Transfer

Description

The GS66508B is an enhancement mode GaN-on-

silicon power transistor. The properties of GaN allow

for high current, high voltage breakdown and high

switching frequency. GaN Systems innovates with

industry leading advancements such as patented

Island Technology® and GaNPX® packaging. Island

Technology® cell layout realizes high-current die and

high yield. GaNPX® packaging enables low inductance

& low thermal resistance in a small package. The

GS66508B is a bottom-side cooled transistor that offers

very low junction-to-case thermal resistance for

demanding high power applications. These features

combine to provide very high efficiency power

switching.

Circuit Symbol

同様の部品番号 - GS66508B

メーカー	部品番号	データシート	部品情報
GaN Systems Inc.	GS66508T	1Mb / 17P	Top-side cooled 650 V E-mode GaN transistor Rev 200402

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同様の説明 - GS66508B

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