Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2507DF

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. High and low DC current gain. h

V

Fig.5. High and low DC current gain. h

V

Fig.6. Typical collector-emitter saturation voltage.

V

IC

IB

VCE

ICsat

IBend

64us

26us

20us

t

t

t

TRANSISTOR

DIODE

BU2507DF/X

0.01

0.1

1

10

1

10

100

IC / A

hFE

Ths = 25 C

Ths = 85 C

VCE = 1 V

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

t

- IBM

BU2507DF/X

0.01

0.1

1

10

1

10

100

IC / A

hFE

VCE = 5 V

Ths = 25 C

Ths = 85 C

+ 150 v nominal

adjust for ICsat

1mH

12nF

D.U.T.

LB

IBend

-VBB

Rbe

0.1

1

10

100

0.01

0.1

1

10

IC / A

VCESAT / V

Ths = 25 C

Ths = 85 C

IC/IB = 3

IC/IB = 4

IC/IB = 5

BU2507DF/X

September 1997

3

Rev 1.200