Data Sheet

G10240EJ7V0DS

3

µPC4556

ELECTRICAL CHARACTERISTICS (TA = 25°C, V± =

±15 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input Offset Voltage

VIO

RS

≤ 10 kΩ

±0.5

±6

mV

Input Offset Current

Note 7

IIO

±5

±200

nA

Input Bias Current

Note 7

IB

180

500

nA

Large Signal Voltage Gain

AV

RL

≥ 2 kΩ , VO = ±10 V

20000

100000

Power Consumption

Pd

IO = 0 A

90

170

mW

Common Mode Rejection Ratio

CMR

RS

≤ 10 kΩ

70

90

dB

Supply Voltage Rejection Ratio

SVR

RS

≤ 10 kΩ

30

150

µV/V

RL

≥ 2 kΩ

±12

±14

V

Output Voltage Swing

Vom

IO =

±25 mA

±10

±11.5

V

Common Mode Input Voltage Range

VICM

±12

±14

V

Slew Rate

SR

AV

≥ 10 (20 dB)

5

V/

µs

Input Equivalent Noise Voltage

Vn

RS = 1 k

Ω, f = 1 Hz to 1 kHz

6

µVp-p

Channel Separation

f = 1 kHz

105

dB

Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.