© Philips Electronics N.V. 2000.

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 26 July 2000

Document order number: 9397 750 07223

Contents

Philips Semiconductors

BST82

N-channel enhancement mode field-effect transistor

1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4

Pinning information . . . . . . . . . . . . . . . . . . . . . . 1

5

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1

Transient thermal impedance . . . . . . . . . . . . . . 4

8

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5

9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10

11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12

Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11