Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AF

Fig.3. Switching times waveforms (16 kHz).

Fig.4. Switching times definitions.

Fig.5. Switching times test circuit.

Fig.6. High and low DC current gain.

Fig.7. High and low DC current gain.

Fig.8. Typical collector-emitter saturation voltage.

IC

IB

VCE

ICsat

IB1

64us

26us

20us

t

t

t

TRANSISTOR

DIODE

IB2

0.01

0.1

1

10

1

10

100

hFE

IC / A

VCE = 1 V

Ths = 25 C

Ths = 85 C

ICsat

90 %

10 %

tf

ts

IB1

IC

IB

t

t

- IB2

0.01

0.1

1

10

1

10

100

VCE = 5 V

hFE

IC / A

Ths = 25 C

Ths = 85 C

+ 150 v nominal

adjust for ICsat

Lc

Cfb

T.U.T.

LB

IBend

-VBB

0.1

1

10

0

0.2

0.4

0.6

0.8

1

IC / A

VCESAT / V

Ths = 25 C

Ths = 85 C

July 1999

3

Rev 1.000