Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4523AX

Fig.7. High and low DC current gain.

Fig.8. High and low DC current gain.

Fig.9. Typical collector-emitter saturation voltage.

Fig.10. Typical base-emitter saturation voltage.

Fig.11. Typical collector storage and fall time.

I

Fig.12. Normalised power dissipation.

PD% = 100

⋅P

0.01

0.1

1

10

100

1

10

100

IC / A

hFE

Ths = 25 C

Ths = 85 C

VCE = 1 V

BU4523AF/X

01

234

0.6

0.7

0.8

0.9

1

1.1

1.2

IB / A

VBEsat / V

IC = 6.5 A

IC = 8 A

Ths = 25 C

Ths = 85 C

BU4523AF/X

0.01

0.1

1

10

100

1

10

100

IC / A

hFE

Ths = 25 C

Ths = 85 C

VCE = 5 V

BU4523AF/X

012

34

0

2

4

6

8

10

IB / A

ts/tf / us

BU4523AF/X 16kHz

ICsat = 8 A

Ths = 85 C

Freq = 16 kHz

ts

tf

0.1

1

10

100

0.01

0.1

1

10

IC / A

VCEsat / V

Ths = 25 C

Ths = 85 C

IC/IB = 5

BU4523AF/X

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

May 1998

4

Rev 1.100