Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Eoff

VS = 400 V,

VGS = 6 V,

ID_LS = 3.2 A,

ID_HS= 2.2 A

See Figure 3

Turn-off switching losses

2.5

µJ

1. t(on) and t(off) include the propagation delay time of the internal driver

2. tC(on) and tC(off) are the switching times of GaN transistor itself under the internally given gate driving conditions

Figure 3. Switching time definition

ID

ID

VDS

VDS

VIN

VIN

t(ON)

t(OFF)

tC(ON)

tC(OFF)

10%ID

10%VDS

10%ID

10%VDS

(a) turn-on

(b) turn-off

Figure 4. Typ ID_LS vs. VDS at TJ=25°C

0

1

2

3

4

5

VDS (V)

0

10

5

15

20

25

30

TJ=25°C

4V

5V

6V

Figure 5. Typ ID_LS vs. VDS at TJ=125°C

0

1

2

3

4

5

VDS (V)

0

4

2

6

8

10

12

TJ=125°C

4V

5V

6V

MASTERGAN2

Device characterization values

DS13597 - Rev 2.0

page 10/29