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STGD4H60DF データシート(PDF) 1 Page - STMicroelectronics

部品番号 STGD4H60DF
部品情報  Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
PDF  18 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD4H60DF データシート(HTML) 1 Page - STMicroelectronics

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background image
1
3
TAB
2
DPAK
C(2, TAB)
E(3)
NG1E3C2T
G(1)
Features
•
Maximum junction temperature: TJ = 175 °C
•
Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
•
Tight parameter distribution
•
Low thermal resistance
•
Short-circuit rated
•
Soft and fast recovery antiparallel diode
Applications
•
Industrial motor control
•
Dishwashers
•
Refrigerators and freezers
•
Fans
Description
This device is an IGBT developed using an advanced proprietary trench gate
field-stop structure. This device is part of the H series of IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGD4H60DF
Product summary
Order code
STGD4H60DF
Marking
G4H60DF
Package
DPAK
Packing
Tape and reel
Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
STGD4H60DF
Datasheet
DS13901 - Rev 2 - February 2023
For further information contact your local STMicroelectronics sales office.
www.st.com


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