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B2D08065K データシート(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B2D08065K データシート(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() 2 1 B2D08065K SiC Schottky Diode V RRM 650 V 8 A 24 nC I F (TC=155°C) Q C Package: TO-220-2 Product Summary 2 1 backside Features Benefits Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on V F Excellent surge current capability Low capacitive charge Essentially no switching losses System efficiency improvement over Si diodes Increased power density Enabling higher switching frequency Switch mode power supplies (SMPS) Uninterruptible power supplies Pin1 and backside - Cathode Pin2 - Anode Motor drivers Power factor correction Reduction of heat sink requirements System cost savings due to smaller magnetics Reduced EMI Applications Package Pin Definitions Package Parameters 1 / 7 www.basicsemi.com Part Number Marking Package B2D08065K B2D08065K TO-220-2 Electrical Connection Rev. 1.3 |
同様の部品番号 - B2D08065K |
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同様の説明 - B2D08065K |
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