Technical Data

Data Sheet N0592, Rev. C



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

BAV70

BAV70 SWITCHING DIODE

Characteristic

Symbol

Limits

Units

Reverse Voltage

VR

85

V

Forward Current

IF

200

mA

Non-Repetitive Peak Forward Surge Current @t=8.3ms

IFSM

2.0

A

Power Dissipation

PD

225

mW

Typical Thermal Resistance, Junction to Ambient Air

RθJA

556

°C/W

Junction and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Characteristic

Symbol

Min

Max

Units

Test Condition

Reverse Breakdown Voltage*

VBR

85

-

V

@IF=100uA

Forward Voltage*

VF

-

0.715

0.855

1

1.25

V

@IF=1mA

@IF=10mA

@IF=50mA

@IF=150mA

Reverse Leakage Current*

IR

-

2.5

uA

@VR=75V

Capacitance between terminals

CT

-

1.5

pF

VR=0V, f=1.0MHz

Reverse Recovery Time

trr

-

6.0

ns

IF=IR=10mA,

IRR=0.1×IR, RL=100Ω

* Pulse width < 300 µs, duty cycle < 2%

Note: 1. Device mounted on fiberglass substrate 40×40×1.5mm

Features

Schematic & Pin Configuration

Mechanical Characteristics

Maximum Ratings@TA=25°C unless otherwise specified

Electrical Characteristics @TA=25°C unless otherwise specified



High Conductance



Fast Switching



Surface Mount Package Ideally Suited for Automatic

Insertion



For General Purpose and Switching



Plastic Material –UL Recognition Flammability

Classification 94V-O



Terminals finish: 100% Pure Tin



This is a Pb − Free Device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon request

SOT-23



Case: SOT-23, Molded Plastic



Terminals: Plated leads Solderable per MIL-STD-202,

Method 208



Mounting Position: Any



Marking: A4