2SD2012_03 datasheet(1/5 Pages) STMICROELECTRONICS

部品番号	2SD2012

部品情報	NPN SILICON POWER TRANSISTOR

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2SD2012

NPN SILICON POWER TRANSISTOR

s

HIGH DC CURRENT GAIN

s

LOW SATURATION VOLTAGE

s

INSULATED PACKAGE FOR EASY

MOUNTING

APPLICATIONS

s

GENERAL PURPOSE POWER AMPLIFIERS

s

GENERAL PURPOSE SWITCHING

DESCRIPTION

The 2SD2012 is a silicon NPN power transistor

housed in TO-220F insulated package.

It is inteded for power linear and switching

applications.

®

INTERNAL SCHEMATIC DIAGRAM

October 2003

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

60

V

VCEO

Collector-Emitter Voltage (IB = 0)

60

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

3

A

ICM

Collector Peak Current

(tp < 5 ms)

6

A

IB

Base Current

0.5

A

Ptot

Total Dissipation at Tc

≤ 25 oC

25

W

Visol

Insulation Withstand Voltage (RMS) from All

Three Leads to Exernal Heatsink

1500

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-220F

1/5

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