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RT8207P データシート(PDF) 21 Page - Richtek Technology Corporation

部品番号 RT8207P
部品情報  Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV/Low-Power DDRIV Memory Power Supply Controller
PDF  22 Pages
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メーカー  RICHTEK [Richtek Technology Corporation]
ホームページ  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8207P データシート(HTML) 21 Page - Richtek Technology Corporation

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21
DS8207P-03
September 2016
www.richtek.com
RT8207P
©
Copyright 2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
Layout Considerations
Layout is very important in high frequency switching
converter design. If designed improperly, the PCB could
radiate excessive noise and contribute to the converter
instability. Certain points must be considered before
starting a layout for the RT8207P.
Connect an RC low pass filter from VDDP to VDD; 1
μF
and 5.1
Ω are recommended. Place the filter capacitor
close to the IC.
Keep current limit setting network as close as possible
to the IC. Routing of the network should avoid coupling
to high voltage switching node.
Connections from the drivers to the respective gate of
the high side or the low side MOSFET should be as
short as possible to reduce stray inductance.
All sensitive analog traces and components such as
VDDQ, FB, PGND, PGOOD, CS, VDD, and TON should
be placed away from high voltage switching nodes such
as PHASE, LGATE, UGATE, and BOOT to avoid
coupling. Use internal layer(s) as ground plane(s) and
shield the feedback trace from power traces and
components.
VLDOIN should be connected to VDDQ output with short
and wide trace. If different power source is used for
VLDOIN, an input bypass capacitor should be placed as
close as possible to the pin with short and wide trace.
The output capacitor for VTT should be placed close to
the pin with short and wide connection in order to avoid
additional ESR and/or ESL of the trace.
It is strongly recommended to connect VTTSNS to the
positive node of VTT output capacitor(s) as a separate
trace from the high current power line to avoid additional
ESR and/or ESL. If it is needed to sense the voltage of
the point of the load, it is recommended to attach the
output capacitor(s) at that point. It is also recommended
to minimize any additional ESR and/or ESL of ground
trace between the GND pin and the output capacitor(s).
Current sense connections must always be made using
Kelvin connections to ensure an accurate signal, with
the current limit resistor located at the device.
Power sections should connect directly to ground
plane(s) using multiple vias as required for current
handling (including the chip power ground connections).
Power components should be placed as close to the IC
as possible to minimize loops and reduce losses.
Figure 7. Derating Curve of Maximum Power Dissipation
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
255075
100
125
Ambient Temperature (°C)
Four-Layer PCB



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