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BUL705 データシート(PDF) 1 Page - STMicroelectronics |
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BUL705 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() May 2006 Rev 1 1/11 11 Order codes Part Number Marking Package Packing BUL705 BUL705 TO-220 Tube BUL705 High voltage fast-switching NPN Power Transistor General features ■ NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C ■ In compliance with the 2002/93/EC European Directive Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Applications ■ Electronic ballast for fluorescent lighting ■ Dedicated for PFC solution in HF ballast half- bridge voltage fed Internal schematic diagram TO-220 1 2 3 www.st.com |
同様の部品番号 - BUL705 |
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同様の説明 - BUL705 |
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