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BUL58D データシート(PDF) 2 Page - STMicroelectronics |
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BUL58D データシート(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 1.47 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 800 V VCEO = 800 V Tj = 125 oC 200 500 µA µA ICEO Collector Cut-off Current (IB = 0) VCE = 450 V 200 µA VCEO(sus) Collector-Emitter Sustaining Voltage IC = 100 mA L = 25 mH 450 V VEBO Emitter-Base Voltage (IC = 0) IE = 10 mA 9 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IB = 0.8 A IC = 5 A IB = 1 A 1.5 2 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 4 A IB = 0.8 A IC = 5 A IB = 1 A 1.3 1.5 V V hFE ∗ DC Current Gain IC = 5 A VCE = 5 V IC = 500 mA VCE = 5 V 5 38 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A IB1 = 0.4 A VBE(off) = -5 V RBB = 0 Ω VCL = 250 V L = 200 µH 1 90 1.8 180 µs ns ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A IB1 = 0.4 A VBE(off) = -5 V RBB = 0 Ω VCL = 250 V L = 200 µH Tj = 125 oC 1.5 180 µs ns Vf Diode Forward Voltage IC = 3 A 3 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas Derating Curve BUL58D 2/6 |
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