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BUL89 データシート(PDF) 2 Page - STMicroelectronics

部品番号 BUL89
部品情報  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL89 データシート(HTML) 2 Page - STMicroelectronics

  BUL89 Datasheet HTML 1Page - STMicroelectronics BUL89 Datasheet HTML 2Page - STMicroelectronics BUL89 Datasheet HTML 3Page - STMicroelectronics BUL89 Datasheet HTML 4Page - STMicroelectronics BUL89 Datasheet HTML 5Page - STMicroelectronics BUL89 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-Case
Max
1.14
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 850 V
VCE = 850 V
Tj = 125
o C
100
500
µA
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
100
µA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH
400
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 5 A
IB = 1 A
IC = 8 A
IB = 1.6 A
IC = 12 A
IB = 2.4 A
1
1.5
5
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 5 A
IB = 1 A
IC = 8 A
IB = 1.6 A
1.3
1.6
V
V
hFE
∗
DC Current Gain
IC = 5 A
VCE = 5 V
IC = 10 mA
VCE = 5 V
10
10
40
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 8 A
IB1 = 1.6 A
VBE(off) = -5 V
RBB = 0
Ω
VCL = 350 V
L = 200
µH
(see figure 1)
1.5
55
2.3
110
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 8 A
IB1 = 1.6 A
VBE(off) = -5 V
RBB = 0
Ω
VCL = 350 V
L = 200
µH
Tj = 100
oC
(see figure 1)
1.9
80
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
BUL89
2/6



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