BUY69A datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.75

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1000 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 8 V

VCEO(sus)

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 8 A

IB = 2.5 A

3.3

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 8 A

IB = 2.5 A

2.2

hFE

∗

DC Current Gain

IC = 2.5 A

VCE = 10 V

Transition Frequency

IC = 0.5 A

VCE = 10 V

MHz

Is/b**

Second Breakdown

Collector Current

VCE = 25 V

ton

Turn on Time

IC = 5 A

VCE = 250 V

IB1 = 1 A

0.2

µs

Storage Time

Fall Time

IC = 5 A

VCE = 250 V

IB1 = - IB2 = 1 A

1.7

0.3

µs

Fall Time

IC = 8 A

VCE = 40 V

IB1 = - IB2 = 2.5 A

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

∗∗ Pulsed: 1s, non repetitive pulse.

BUY69A

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