STB70NF3LLT4 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STB70NF3LLT4

部品情報	N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

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5 / 13 page

STB70NF3LL

Electrical characteristics

5/13

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

Turn-on delay time

Rise time

VDD = 15V

ID = 35A

RG =4.7Ω

VGS = 4.5V

(Resistive Load Figure 16)

165

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 15V ID= 70A

VGS= 4.5V

8.5

td(off)

Turn-off delay time

Fall time

VDD = 15 V

ID = 35 A

RG =4.7Ω,

VGS = 4.5 V

(Resistive Load Figure 16)

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

280

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward on voltage

ISD = 70 A

VGS = 0

1.3

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 70 A di/dt = 100A/µs

VDD = 20 V

TJ = 150°C

(see test circuit Figure 14)

2.5

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