100H3LL- datasheet(2/11 Pages) STMICROELECTRONICS

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STSJ100NH3LL

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Table 3: Absolute Maximum ratings

Table 4: Thermal Data

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On /Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

VGS

Gate- source Voltage

± 16

ID(2)

Drain Current (continuous) at TC = 25°C

100

ID(1)

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

15.6

IDM(3)

Drain Current (pulsed)

100

Ptot(2)

Total Dissipation at TC = 25°C

Ptot(1)

Total Dissipation at TC = 25°C

Rthj-c

Rthj-pcb(4)

Tstg

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

Max

1.8

150

-55 to 150

°C/W

°C

Symbol

Parameter

Max Value

Unit

IAV

Not-Repetitive Avalanche Current

(pulse width limited by Tj max)

12.5

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAV, VDD = 24 V)

1.3

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS =Max Rating ,TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

±100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 12.5A

VGS = 4.5V, ID = 12.5A

0.0032

0.004

0.0035

0.005

Ω

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