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STGWA60H65DFB データシート(PDF) 8 Page - STMicroelectronics

部品番号 STGWA60H65DFB
部品情報  Trench gate field-stop 650 V, 60 A high speed HB series IGBT
PDF  21 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA60H65DFB データシート(HTML) 8 Page - STMicroelectronics

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Figure 19. Reverse recovery current vs diode current
slope
Irm
(A)
70
30
0
0
di/dt(A/µs)
500
1000 1500
Vr=400V, IF=60A
TJ=175°C
2000
2500
50
60
40
20
10
80
TJ=25°C
GIPD280820131635FSR
Figure 20. Reverse recovery time vs diode current slope
trr
(ns)
150
0
0
di/dt(A/µs)
500
1000 1500
Vr =400V, IF=60A
TJ =175°C
2000
2500
250
200
100
50
TJ =25°C
300
GIPD280820131643FSR
Figure 21. Reverse recovery charge vs diode current
slope
Qrr
(nC)
1500
0
0
di/dt(A/µs)
500
1000 1500
Vr=400V, IF=60A
TJ=175°C
2000
2500
2500
2000
1000
500
TJ=25°C
3000
3500
4000
GIPD280820131650FSR
Figure 22. Reverse recovery energy vs diode current
slope
Err
(µJ)
300
0
0
di/dt(A/µs)
500
1000 1500
Vr=400V, IF=60A
TJ =175°C
2000
2500
500
400
200
100
TJ= 25°C
600
700
800
GIPD280820131656FSR
Figure 23. Capacitance variations
C(pF)
1000
100
10
0.1
VCE (V)
1
10
10000
Cies
Coes
Cres
100
f=1MHz
GIPD280820131518FSR
Figure 24. Collector current vs switching frequency
20
40
60
80
100
1
10
Ic (A)
f (kHz)
G
Ω
Rectangular current shape,
(duty cycle=0.5, VCC= 400V, R =10
VGE = 0/15V, T
J
=175°C
)
Tc=80°C
Tc=100 °C
GIPD080120151105FSR
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics (curves)
DS9535 - Rev 8
page 8/21



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