MBD330DWT1 datasheet(2/6 Pages) ONSEMI

2 / 6 page

MBD110DWT1, MBD330DWT1, MBD770DWT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

MBD110DWT1

MBD330DWT1

MBD770DWT1

V(BR)R

7.0

−

Diode Capacitance

(VR = 0, f = 1.0 MHz, Note 1)

MBD110DWT1

−

0.88

1.0

Total Capacitance

(VR = 15 Volts, f = 1.0 MHz)

MBD330DWT1

(VR = 20 Volts, f = 1.0 MHz)

MBD770DWT1

−

0.9

0.5

1.5

1.0

Reverse Leakage

(VR = 3.0 V)

MBD110DWT1

(VR = 25 V)

MBD330DWT1

(VR = 35 V)

MBD770DWT1

−

0.02

9.0

0.25

200

Noise Figure

(f = 1.0 GHz, Note 2)

MBD110DWT1

−

6.0

−

Forward Voltage

(IF = 10 mA)

MBD110DWT1

(IF = 1.0 mA)

MBD330DWT1

(IF = 10 mA)

(IF = 1.0 mA)

MBD770DWT1

(IF = 10 mA)

−

0.5

0.38

0.52

0.42

0.7

0.6

0.45

0.6

0.5

1.0

ORDERING INFORMATION

Device

Marking

Package

Shipping†

MBD110DWT1

SC−88 / SOT−363

3000 Units / Tape & Reel

MBD110DWT1G

SC−88 / SOT−363

(Pb−Free)

MBD330DWT1

SC−88 / SOT−363

MBD330DWT1G

SC−88 / SOT−363

(Pb−Free)

MBD770DWT1

SC−88 / SOT−363

MBD770DWT1G

SC−88 / SOT−363

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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