STS01DTP06_06 datasheet(4/11 Pages) STMICROELECTRONICS

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Electrical characteristics

STS01DTP06

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 3.

Q1-NPN transistor electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 60V

0.1

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 30V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5V

µA

V(BR)CEO (1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10mA

VCE(sat) (1)

1. Pulsed: Pulse duration = 300 ms, duty cycle

≤ 1.5 %

Collector-emitter

saturation voltage

IC = 1A

IB = 10mA

IC = 2A

IB = 100mA

0.35

0.7

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 1A

IB = 10mA

0.85

1.1

hFE (1)

DC current gain

IC = 1A

VCE = 2V

IC = 3A

VCE = 2V

100

Table 4.

Q2-PNP transistor electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -60V

-0.1

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = -30V

-1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = -5V

-1

µA

V(BR)CEO (1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = -10mA

-30

VCE(sat) (1)

Collector-emitter

saturation voltage

IC = -1A

IB = -10mA

IC = -2A

IB = -100mA

-0.35

-1

-0.7

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