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MAC97A6-AA3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 MAC97A6-AA3-R
部品情報  LOGIC LEVEL TRIAC
PDF  5 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MAC97A6-AA3-R データシート(HTML) 2 Page - Unisonic Technologies

  MAC97A6-AA3-R Datasheet HTML 1Page - Unisonic Technologies MAC97A6-AA3-R Datasheet HTML 2Page - Unisonic Technologies MAC97A6-AA3-R Datasheet HTML 3Page - Unisonic Technologies MAC97A6-AA3-R Datasheet HTML 4Page - Unisonic Technologies MAC97A6-AA3-R Datasheet HTML 5Page - Unisonic Technologies  
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MAC97A6/8
TRIACS
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
www.unisonic.com.tw
QW-R401-023,C
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
MAC97A6
400
V
Repetitive Peak off-State Voltage (TJ=25 ~125 )
℃
MAC97A8
VDRM
600
V
RMS on-State Current (Full Sine Wave, TLEAD≤50 )
℃
IT(RMS)
0.6
A
t=20ms
8.0
A
Non-Repetitive Peak on-State Current
(Full Sine Wave, TJ=25℃ Prior to Surge)
t=16.7ms
ITSM
8.8
A
I
2t for Fusing (t=10ms)
I
2t
0.32
A
2s
T2+G+
50
A/µs
T2+G-
50
A/µs
T2-G-
50
A/µs
Repetitive Rate of Rise of on-State Current After
Triggering(ITM=1.0A, IG=0.2A, dIG/dt=0.2A/µs)
T2-G+
dIT/dt
10
A/µs
Peak Gate Voltage [ t=2µs (max) ]
VGM
5
V
Peak Gate Current [ t=2µs (max) ]
IGM
1
A
Peak Gate Power
[ t=2µs (max) ]
PGM
5
W
Average Gate Power [ Tcase=80℃, t=2us (max) ]
PG(AV)
0.1
W
Operating Junction Temperature
TJ
-40~+125
℃
Storage Temperature
TSTG
-40~+150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-92
150
℃
/W
Thermal Resistance Junction to Ambient
SOT-223
θJA
165
℃
/W
STATIC CHARACTERISTICS (TJ=25℃, unless otherwise specified)
DYNAMIC CHARACTERISTICS(TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
T2+G+
1
5
mA
T2+G-
2
5
mA
T2-G-
2
5
mA
Gate Trigger Current
IGT
VD=12V, IT=0.1A
T2-G+
4
7
mA
T2+G+
1
10
mA
T2+G-
5
10
mA
T2-G-
1
10
mA
Latching Current
IL
VD=12V, IGT=0.1A
T2-G+
2
10
mA
Holding Current
IH
VD=12V, IGT=0.1A
1
10
mA
On-State Voltage
VT
IT=0.85A
1.4
1.9
V
VD=12V,IT=0.1A
0.9
2
V
Gate Trigger Voltage
VGT
VD=VDRM, IT=0.1A, TJ=110℃
0.1
0.7
V
Off-State Leakage Current
ID
VD=VDRM(MAX), TJ=110℃
3
100
µA
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX UNITS
Critical Rate of Rise of Off-State
Voltage
dVD/dt
VD=67% of VDRM(max),
Tcase=110 ,
℃
Exponential
Waveform, Gate Open Circuit
30
45
V/µs
Critical Rate of Rise of Commutation
Voltage
dVcom/dt
VD=Rated VDRM, Tcase=50 ,
℃
lTM=0.84A, commutating
dl/dt=0.3A/ms
5
V/µs
Gate Controlled Turn-On Time
tgt
ITM=1.0A,VD=VDRM(max),
IG=25mA,dIG/dt=5A/µs
2
µs



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