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DTB114EL-AL3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 DTB114EL-AL3-R
部品情報  DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTB114EL-AL3-R データシート(HTML) 2 Page - Unisonic Technologies

  DTB114EL-AL3-R Datasheet HTML 1Page - Unisonic Technologies DTB114EL-AL3-R Datasheet HTML 2Page - Unisonic Technologies DTB114EL-AL3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTB114E
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-042,B
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-40~+10
V
Output Current
IOUT
-500
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN(OFF)
VCC= -5V, IOUT= -100μA
-0.5
Input Voltage
VIN(ON)
VOUT= -0.3V, IOUT= -10mA
-3
V
Output Voltage
VOUT(ON) IOUT/IIN= -50mA/-2.5 mA
-0.1
-0.3
V
Input Current
IIN
VIN= -5V
-0.88
mA
Output Current
IOUT(OFF) VCC= -50V , VIN=0V
-0.5
µA
DC Current Gain
hFE
VOUT= -5V, IOUT= -50mA
56
Input Resistance
R1
7
10
13
kΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE= -10 V, IE=5mA, f=100MHz*
200
MHz
*Transition frequency of the device



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