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DTC144T-AE3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 DTC144T-AE3-R
部品情報  NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC144T-AE3-R データシート(HTML) 2 Page - Unisonic Technologies

  DTC144T-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTC144T-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTC144T-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTC144T
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-066,B
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
SOT-523
150
mW
Collector Power Dissipation
SOT-23/SOT-323
PC
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=50µA
50
V
Collector-Emitter Breakdown Voltage
BVCEO IC=1mA
50
V
Emitter-Base Breakdown Voltage
BVEBO IE=50µA
5
V
Collector Cutoff Current
ICBO
VCB=50V
0.5
µA
Emitter Cutoff Current
IEBO
VEB=4V
0.5
µA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=5mA, IB=0.5mA
0.3
V
DC Current Gain
hFE
VCE=5V, IC=1mA
100
250
600
Input Resistance
R1
32.9
47
61.1
kΩ
Transition Frequency
fT
VCE=10V, IE=-5mA, f=100MHz*
250
MHz
* Transition frequency of the device



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