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DTC114TL-AE3-6-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 DTC114TL-AE3-6-R
部品情報  NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC114TL-AE3-6-R データシート(HTML) 2 Page - Unisonic Technologies

  DTC114TL-AE3-6-R Datasheet HTML 1Page - Unisonic Technologies DTC114TL-AE3-6-R Datasheet HTML 2Page - Unisonic Technologies DTC114TL-AE3-6-R Datasheet HTML 3Page - Unisonic Technologies  
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DTC114T
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-054,B
ABSOLUTE MAXIMUM RATINGS (Ta=25 )
℃
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
SOT-23/SOT-323
200
mW
Collector Power Dissipation
SOT-523
PC
150
mW
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50μA
50
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50μA
5
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC=10mA, IB=1mA
0.3
V
Collector Cut-off Current
ICBO
VCB=50V
0.5
μA
Emitter Cut-off Current
IEBO
VEB=4V
0.5
μA
DC Current Gain
hFE
VCE=5V, IC=1mA
100
300
600
Input Resistance
RIN
7
10
13
kΩ
Current Gain Bandwidth Product
fT
VCE=10V, IE=-5mA, f=100MHz
250
MHz



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