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MMBT3904L-AE3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 MMBT3904L-AE3-R
部品情報  GENERAL PURPOSE APPLIATION
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBT3904L-AE3-R データシート(HTML) 2 Page - Unisonic Technologies

  MMBT3904L-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBT3904L-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBT3904L-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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MMBT3904
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-012,B
ABSOLUTE MAXIMUM RATING ( Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Collector Dissipation
PC
350
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX
UNIT
Collector Cut-off Current
ICEX
VCE=30V, VEB=3V
50
nA
Base Cut-off Current
IBL
VCE=30V, VEB=3V
50
nA
Collector-base breakdown voltage
VCBO
IC=10μA, IE=0
60
V
Collector-emitter breakdown voltage (note)
VCEO
IC=1mA, IB=0
40
V
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
6
V
hFE1
VCE=1V, IC=0.1mA
40
hFE2
VCE=1V, IC=1mA
70
hFE3
VCE=1V, IC=10mA
100
300
hFE4
VCE=1V, IC=50mA
60
DC current gain (note)
hFE5
VCE=1V, IC=100mA
30
VCE(SAT)1IC=10mA, IB=1mA
0.2
V
Collector-emitter saturation voltage (note)
VCE(SAT)2IC=50mA, IB=5mA
0.3
V
VBE(SAT)1IC=10mA, IB=1mA
0.65
0.85
V
Base-emitter saturation voltage (note)
VBE(SAT)2IC=50mA, IB=5mA
0.95
V
Current gain bandwidth product
fT
VCE=20V, IC=10mA, f=100MHz
300
MHz
Output Capacitance
Cob
VCB=5V, IE=0, f=1MHz
4
pF
Turn on time
tON
VCC=3V,
VBE=0.5V,
IC=10mA,
IB1=1mA
70
ns
Turn off time
tOFF
IB1=1B2=1mA
250
ns
Note: Pulse test: PW<=300
μs, Duty Cycle<=2%



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