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データシートサーチシステム |
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データシートサーチシステム |
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ISF1018 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISF1018 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISF1018 FEATURES · Low drain-source on-resistance : RDS(ON) = 0.073Ω (typ.) · Easy to control Gate switching · Enhancement mode : Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.5mA) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION · Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 30.8 A IDM Drain Current-Single Pulsed 123 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 2.78 ℃ /W |
同様の部品番号 - ISF1018 |
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同様の説明 - ISF1018 |
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