TIP147 datasheet(1/7 Pages) ONSEMI

部品番号	TIP147

部品情報	Darlington Complementary Silicon Power Transistors

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September, 2005 − Rev. 5

1

Publication Order Number:

TIP140/D

TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)

TIP141, TIP142, TIP146, and TIP147 are Preferred Devices

Darlington Complementary

Silicon Power Transistors

Designed for general−purpose amplifier and low frequency

switching applications.

Features

• High DC Current Gain −

Min hFE = 1000 @ IC

= 5.0 A, VCE = 4 V

• Collector−Emitter Sustaining Voltage − @ 30 mA

VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145

= 80 Vdc (Min) − TIP141, TIP146

= 100 Vdc (Min) − TIP142, TIP147

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

TIP140

TIP145

TIP141

TIP146

TIP142

TIP147

Unit

Collector − Emitter Voltage

VCEO

60

80

100

Vdc

Collector − Base Voltage

VCB

60

80

100

Vdc

Emitter − Base Voltage

VEB

5.0

Vdc

Collector Current

− Continuous

− Peak (Note 1)

IC

10

15

Adc

Base Current − Continuous

IB

0.5

Adc

Total Power Dissipation

@ TC = 25_C

PD

125

W

Operating and Storage

Junction Temperature Range

TJ, Tstg

−65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

RqJC

1.0

°C/W

Thermal Resistance,

Junction−to−Ambient

RqJA

35.7

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. 5 ms,

v 10% Duty Cycle.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−100 VOLTS, 125 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

SOT−93 (TO−218)

CASE 340D

STYLE 1

MARKING DIAGRAM

A

= Assembly Location

Y

= Year

WW

= Work Week

TIP14x

= Device Code

x

= 0, 1, 2, 5, 6, or 7

G

= Pb−Free Package

AYWWG

TIP14x

同様の部品番号 - TIP147

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	TIP147	204Kb / 4P	POWER TRANSISTORS(10A,60-100V,125W)
Motorola, Inc	TIP147	234Kb / 6P	10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP147	217Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1996 REV 1
Power Innovations Ltd	TIP147	114Kb / 6P	PNP SILICON POWER DARLINGTONS
STMicroelectronics	TIP147	48Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Mar-2000

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同様の説明 - TIP147

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