BP3102

High Precision PSR Constant Current LED Driver

BP3102_DS_Rev.1.0

www.bpsemi.com

5

Bright Power Semiconductor Co. Confidential – Customer Use Only

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Units

MOSFET Section

RDS_ON

Static drain-source

on-resistance

VGS=10V/IDS=0.5A

13

Ω

BVDSS

Drain-source breakdown

voltage

VGS=0V/IDS=250uA

600

V

IDSS

Drain-source leakage

current

VGS=0V/VDS=600V

200

nA

Note 4 : production testing of the chip is performed at 25°C.

Note 5: the maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed by design, characterization and statistical

analysis

Note 6: refer to application information

Typical Performance Characteristics

Turn on threshold VS. Temperature

Turn off threshold VS. Temperature