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CEM6607 データシート(PDF) 3 Page - Chino-Excel Technology |
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CEM6607 データシート(HTML) 3 Page - Chino-Excel Technology |
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3 / 4 page ![]() CEM6607 3 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 V GS=-10V I D=-3.8A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=-250µA -50 -25 0 25 50 75 100 125 150 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 10 0 2 4 6 1 3 5 8 6 4 2 0 T J=125 C -55 C 25 C 0.4 0.6 0.8 1.0 10 -1 1.4 1.2 10 0 10 1 10 2 V GS=0V 0 0.5 2 3 2.5 1.5 1 15 0 12 9 6 3 -V GS=3V -V GS=10,8,6,4V 1500 Crss 0 1250 1000 750 500 250 0 5 10 15 20 25 30 Ciss Coss |
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