CEP35P03/CEB35P03

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

36

30

-1

-3

-100

100

-1

m

Ω

V

nA

nA

µ

A

V

S

2

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Test Condition

Typ

Max

-30

f = 1.0 MHz

1300

300

150

10

4

58

23

20

10

80

30

20

3

5

25

-2.3

-1.2

8

57

47

m

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.