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ISCF8011 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 ISCF8011
部品情報  SiC N-Channel MOSFET
PDF  8 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8011 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCF8011 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 7Page - Inchange Semiconductor Company Limited ISCF8011 Datasheet HTML 8Page - Inchange Semiconductor Company Limited  
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ISCF8011
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
High Blocking Voltage with Low On-Resistance
·
RDS(ON)= 22mΩ@VGS=20V Tj=25℃
·
High Speed Switching with Low Capacitance
·
Easy to Parallel and Simple to Drive
APPLICATIONS
·
Solar Inverters
·
Switch Mode Power Supplies
·
DC-DC Converters
·
Motor drives
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGSS
Gate-Source Opetation Voltage
-10/+22
V
ID
Drain Current-Continuous
115
A
Drain Current-Continuous@Tc=100℃
85
A
IDM
Drain Current-Single Pluse
250
A
PD
Total Dissipation @TC=25℃
550
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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