2SC2229 datasheet(1/3 Pages) ISC

部品番号	2SC2229

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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2SC2229

isc Silicon NPN Power Transistor

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage

-V(BR)CEO=150V(Min)

·

Collector-Emitter Saturation Voltage

-VCE(sat)= 0.5V(Max) @IC= 10mA

APPLICATIONS

·

Designed for power amplifier,high speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

50

mA

IB

Base Current

20

mA

PC

Collector Power Dissipation

TC=25℃

800

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

同様の部品番号 - 2SC2229

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SC2229	189Kb / 3P	TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAHE SWITCHING, DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS)
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