SW200R10VT datasheet(3/9 Pages) VBSEMI

部品番号	SW200R10VT

部品情報	N-Channel 100 V (D-S) MOSFET

PDF	9 Pages

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メーカー	VBSEMI [VBsemi Electronics Co.,Ltd]

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

012345

VDS - Drain-to-Source Voltage (V)

= 10 V thru 7 V

= 6 V

= 5 V

0.015

0.020

0.025

0.030

0.035

0.040

102030405060

ID - Drain Current (A)

VGS = 10 V

VGS = 8 V

ID = 5 A

Qg - Total Gate Charge (nC)

VDS = 50 V

VDS = 100 V

VDS = 75 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.3

0.6

0.9

1.2

0246

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

400

800

1200

1600

2000

020

100

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.5

0.9

1.3

1.7

2.1

2.5

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS = 10 V

ID = 5 A

VGS = 8 V

SW200R10VT

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