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MMDT3904 データシート(PDF) 2 Page - Diodes Incorporated

部品番号 MMDT3904
部品情報  DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMDT3904 データシート(HTML) 2 Page - Diodes Incorporated

  MMDT3904 Datasheet HTML 1Page - Diodes Incorporated MMDT3904 Datasheet HTML 2Page - Diodes Incorporated MMDT3904 Datasheet HTML 3Page - Diodes Incorporated MMDT3904 Datasheet HTML 4Page - Diodes Incorporated  
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Electrical Characteristics @T
A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
⎯
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICEX
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.20
0.30
V
IC = 10mA, IB = 1.0mA
B
IC = 50mA, IB
B
= 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
0.85
0.95
V
IC = 10mA, IB = 1.0mA
B
IC = 50mA, IB
Notes:
3.
Short duration pulse test used to minimize self-heating.
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
k
Ω
Voltage Feedback Ratio
hre
0.5
8.0
x 10
-4
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
1.0
40
μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
300
⎯
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
⎯
5.0
dB
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Storage Time
ts
⎯
200
ns
Fall Time
tf
⎯
50
ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
DS30088 Rev. 11 - 2
2 of 4
www.diodes.com
MMDT3904
© Diodes Incorporated



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