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MSCSM120AM31CT1 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MSCSM120AM31CT1 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() ISCFM8018 eq MSCSM120AM31CT1 All-SiC Power Module www.iscsemi.com 2023-9-2 1 FEATURES · Low Inductance · Isolated Copper Baseplate Using DBC Technology · Low Switching Losses · Integrated NTC Temperature Sensor · Compact Design · High Power Density APPLICATIONS · AC and DC Motor Control · Solar Applications · DC/DC Converters · Inverter for Motor Drive Absolute Maximum Ratings(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VALUE UNIT VDS max Drain-Source Voltage 1200 V VGS max Gate-Source Opetation Voltage Absolute Maximum Values -10/+25 V VGS op Gate-Source Opetation Voltage Recommended Operational Values -5/+20 V ID Continuous Drain Current VGS=20V, Tc=25℃ 122 A VGS=20V, Tc=80℃ 84 A ID(pulsed) Maximum Pulsed Drain-Source Current VGS=20V, Tvj=25℃, tpmax Limited by Tvj max 160 A TJ Max. Operating Junction Temperature -40~175 ℃ |
同様の部品番号 - MSCSM120AM31CT1 |
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同様の説明 - MSCSM120AM31CT1 |
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