STF16N60M2 datasheet(1/2 Pages) ISC

部品番号	STF16N60M2

部品情報	N-Channel Power MOSFET

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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ISF1045

eq STF16N60M2

N-Channel Power MOSFET

www.iscsemi.com

1

FEATURES

·Drain Current -ID= 12A@ TC=25℃

·Drain Source Voltage -VDSS= 600V(Min)

·Static Drain-Source On-Resistance

-RDS(on) =0.32Ω(Max)@VGS= 10V

APPLICATIONS

·

Switching application

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

600

V

VGS

Gate-Source Voltage-Continuous

±

25

V

ID

Drain Current-Continuous

12

A

ID

Drain Current-Continuous at TC=100℃

7.6

A

IDM

Drain Current-Single Pluse

48

A

PD

Total Dissipation @TC=25℃

25

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

5

℃

/W

同様の部品番号 - STF16N60M2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STF16N60M2	383Kb / 13P	Extremely low gate charge March 2015 Rev 1

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