AM29PL160C_06 datasheet(21/44 Pages) AMD

部品番号	AM29PL160C

部品情報	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory

PDF	44 Pages

Scroll/Zoom	100%

メーカー	AMD [Advanced Micro Devices]

ホームページ	http://www.amd.com

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21 / 44 page

May 9, 2006 22143C7

Am29PL160C

D A TA

SH EE T

pend mode and continue the sector erase operation.

Further writes of the Resume command are ignored.

Another Erase Suspend command can be written after

the device has resumed erasing.

Temporary Unprotect Enable/Disable

Command Sequence

The temporary unprotect command sequence is a

four-bus-cycle operation. The sequence is initiated by

writing two unlock write cycles. A third write cycle sets

up the command. The fourth and final write cycle en-

ables or disables the temporary unprotect feature. If

the temporary unprotect feature is enabled, all sectors

are temporarily unprotected. The system may program

or erase data as needed. When the system writes the

temporary unprotect disable command sequence, all

sectors return to their previous protected or unpro-

tected settings. See Table 10 for more information.

Notes:

1. See Table 10 for erase command sequence.

2. See “DQ3: Sector Erase Timer” for more information.

Figure 2.

Erase Operation

START

Write Erase

Command Sequence

Data Poll

from System

Data = FFh?

Yes

Erasure Completed

Embedded

Erase

algorithm

in progress

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