DATA SHEET

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21445

Rev: E Amendment: 5

Issue Date: November 1, 2006

Am29F040B

4 Megabit (512 K x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

•

5.0 V

± 10% for read and write operations

— Minimizes system level power requirements

•

Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F040 device

•

High performance

— Access times as fast as 55 ns

•

Low power consumption

— 20 mA typical active read current

— 30 mA typical program/erase current

— 1 µA typical standby current (standard access

time to active mode)

•

Flexible sector architecture

— 8 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased

— Supports full chip erase

— Sector protection:

A hardware method of locking sectors to prevent

any program or erase operations within that sector

•

Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

•

Minimum 1,000,000 program/erase cycles per

sector guaranteed

•

20-year data retention at 125

°C

— Reliable operation for the life of the system

•

Package options

— 32-pin PLCC, TSOP, or PDIP

•

Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply Flash standard

— Superior inadvertent write protection

•

Data# Polling and toggle bits

— Provides a software method of detecting

program or erase cycle completion

•

Erase Suspend/Erase Resume

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation